PART |
Description |
Maker |
PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k? NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
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NXP Semiconductors
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PBRN123E |
NPN 800 mA 40 V BISS RETs
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NXP Semiconductors
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PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
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NXP Semiconductors
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PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
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NXP Semiconductors N.V.
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PBSS4112PAN |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
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NXP Semiconductors
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PBSS4160DS |
60 V 1 A NPN/NPN low VCEsat (BISS) transistor
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NXP Semiconductors Philips Semiconductors
|
PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
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NXP
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PBSS4160PAN PBSS4160PAN-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
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NXP Semiconductors
|
PBSS5350D |
50 V, 3 A PNP low VCEsat (BISS) transistor 50伏,3安PNP型低饱和压降(BISS)晶体管
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NXP Semiconductors N.V.
|
PBSS302ND |
40 V, 4 A NPN low VCEsat (BISS) transistor 4000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V.
|
PBSS302NX |
20 V, 5.3 A NPN low VCEsat (BISS) transistor
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NXP Semiconductors
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